Memory elements using self-aligned phase change material layers and methods of manufacturing same

ABSTRACT

A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation-in-part of application Ser. No. 13/889,777 filed on May 8, 2013, which is a divisional of U.S. patent application Ser. No. 13/117,359, filed May 27, 2011, which is a continuation of U.S. application Ser. No. 12/400,044, filed Mar. 9, 2009, now U.S. Pat. No. 7,968,862, issued Jun. 28, 2011, which is a continuation of U.S. application Ser. No. 11/396,616, filed Apr. 4, 2006, now U.S. Pat. No. 7,812,334, issued Oct. 10, 2010, the entirety of each is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to semiconductor devices, and in particular to phase change memory elements and methods of forming and using the same.

BACKGROUND OF THE INVENTION

Non-volatile memories are important elements of integrated circuits due to their ability to maintain data absent a power supply. Phase change materials have been investigated for use in non-volatile memory cells. Phase change memory elements include phase change materials, such as chalcogenide alloys, which are capable of stably transitioning between amorphous and crystalline phases. Each phase exhibits a particular resistance state and the resistance states distinguish the logic values of the memory element. Specifically, an amorphous state exhibits a relatively high resistance, and a crystalline state exhibits a relatively low resistance.

A conventional phase change memory element 1, illustrated in FIGS. 1A and 1B, has a layer of phase change material 8 between first and second electrodes 2, 4, which are supported by a dielectric material 6. The phase change material 8 is set to a particular resistance state according to the amount of current applied by the first and second electrodes 2, 4. To obtain an amorphous state (FIG. 1B), a relatively high write current pulse (a reset pulse) is applied through the conventional phase change memory element 1 to melt at least a portion of the phase change material 8 covering the first electrode 2 for a first period of time. The current is removed and the phase change material 8 cools rapidly to a temperature below the crystallization temperature, which results in the portion of the phase change material 8 covering the first electrode 2 having the amorphous phase. To obtain a crystalline state (FIG. 1A), a lower current write pulse (a set pulse) is applied to the conventional phase change memory element 1 for a second period of time (typically longer in duration than the first period of time and crystallization time of amorphous phase change material) to heat the amorphous portion of the phase change material 8 to a temperature below its melting point, but above its crystallization temperature. This causes the amorphous portion of the phase change material 8 to re-crystallize to the crystalline phase that is maintained once the current is removed and the conventional phase change memory element 1 is cooled. The phase change memory element 1 is read by applying a read voltage which does not change the phase state of the phase change material 8.

A sought after characteristic of non-volatile memory is low power consumption. Often, however, conventional phase change memory elements require large operating currents. It is therefore desirable to provide phase change memory elements with reduced current requirements. For phase change memory elements, it is necessary to have a current density that will heat the phase change material past its melting point and quench it in an amorphous state. One way to increase current density is to decrease the size of a first electrode. These methods maximize the current density at the first electrode interface to the phase change material. Although these conventional solutions are typically successful, it is desirable to further reduce the overall current in the phase change memory element, thereby reducing power consumption in certain applications.

Another desired property of phase change memory is its switching reliability and consistency. Conventional phase change memory elements (e.g., phase change memory element 1 of FIGS. 1A and 1B) have programmable regions of the phase change material layer that are not confined, and have the freedom to extend sideways and the interface between the amorphous portions and crystalline portions of the phase change material may cause reliability issues. The proposed inventions confines the cell so that it reduces the ability to have sideway extension during the change from crystalline to amorphous phases or inadvertent failure.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages and features of the invention will become more apparent from the detailed description of exemplary embodiments provided below with reference to the accompanying drawings in which:

FIGS. 1A-1B illustrate a conventional phase change memory element;

FIGS. 2A-2B illustrate partial cross-sectional and partial top-down views, respectively, of a phase change memory element constructed in accordance with an exemplary embodiment;

FIGS. 3A-5B illustrate partial cross-sectional and partial top-down views of an exemplary method of fabricating the phase change memory element of FIGS. 2A and 2B;

FIGS. 6A-6B illustrate partial cross-sectional and partial top-down views, respectively, of a phase change memory element constructed in accordance with another exemplary embodiment;

FIG. 6C illustrates a partial cross-sectional view of a phase change memory element constructed in accordance with another exemplary embodiment;

FIGS. 7A-8 illustrate partial cross-sectional and partial top-down views of an exemplary method of fabricating the phase change memory element of FIGS. 6A and 6B;

FIGS. 9A-9B illustrate partial cross-sectional and partial top-down views, respectively, of a phase change memory element constructed in accordance with another exemplary embodiment;

FIGS. 9C-9D illustrate partial cross-sectional and partial top-down views, respectively, of a phase change memory element constructed in accordance with another exemplary embodiment;

FIGS. 10A-11B illustrate partial cross-sectional and partial top-down views of an exemplary method of fabricating the phase change memory element of FIGS. 9A and 9B;

FIG. 11C illustrates a partial cross-sectional view of an exemplary method of fabricating the phase change memory element of FIG. 9C;

FIGS. 12A-12B illustrate partial cross-sectional and partial top-down views, respectively, of an array phase change memory elements constructed in accordance with another exemplary embodiment;

FIGS. 13A-13B illustrate partial cross-sectional and partial top-down views, respectively, of an array phase change memory elements constructed in accordance with another exemplary embodiment;

FIGS. 14A-14E illustrate partial cross-sectional and partial top-down views of an array phase change memory elements constructed in accordance with another exemplary embodiment and an exemplary method of fabricating such embodiment; and

FIG. 15 is a block diagram of a processor system having a memory device incorporating a phase change memory element constructed in accordance with an exemplary embodiment.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, reference is made to various specific embodiments of the invention. These embodiments are described with sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that other embodiments may be employed, and that various structural, logical and electrical changes may be made without departing from the spirit or scope of the invention.

The term “substrate” used in the following description may include any supporting structure including, but not limited to, a semiconductor substrate that has an exposed substrate surface. A semiconductor substrate should be understood to include silicon, silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures, including those made of semiconductors other than silicon. When reference is made to a semiconductor substrate or wafer in the following description, previous process steps may have been utilized to form regions or junctions in or over the base semiconductor or foundation. The substrate also need not be semiconductor-based, but may be any support structure suitable for supporting an integrated circuit, including, but not limited to, metals, alloys, glasses, polymers, ceramics, and any other supportive materials as is known in the art.

Exemplary embodiments of the invention provide phase change memory elements and methods of forming the same. An exemplary memory element includes a substrate supporting a first electrode. An insulating material element is positioned over the first electrode, and a phase change material layer is formed over the first electrode and surrounding the insulating material element such that the phase change material layer has a lower surface that is in electrical communication with the first electrode. The memory element also has a second electrode in electrical communication with an upper surface of the phase change material layer.

The invention is now explained with reference to the figures, which illustrate exemplary embodiments and throughout which like reference numbers indicate like features. FIGS. 2A and 2B illustrate an exemplary embodiment of a phase change memory element 100 constructed in accordance with the invention.

The phase change memory element 100 includes a substrate 10 having a first dielectric layer 12 formed thereon, and a first electrode 14 formed in a via 24 within the first dielectric layer 12. The phase change memory element 100 also includes a nitride element 16 formed over the first electrode 14, and within a phase change material layer 18 that surrounds the nitride element 16. The phase change material layer 18 is itself surrounded by a second dielectric layer 20. The FIG. 2A phase change memory element 100 also includes a second electrode 22 formed over the nitride element 16 and in electrical communication with the phase change material layer 18.

FIG. 2B illustrates a partial top-down view of the FIG. 2A phase change memory element 100. As illustrated, the phase change material layer 18 surrounds the nitride element 16. The nitride element 16 and the phase change material layer 18 are formed over the first electrode 14 such that the phase change material layer 18 is in electrical communication with the first electrode 14 (FIG. 2A). The first electrode 14 is formed within a via 24 of the first dielectric layer 12.

In operation, the FIGS. 2A and 2B phase change memory element 100 has the advantage of requiring less current (and, therefore, consumes less power) than typical phase change memory elements because of a reduced contact area between the phase change material layer 18 and the first electrode 14 resulting in a reduced volume of programmable phase change material layer 18. The current necessary to change the phase of the programmable volume of the illustrated phase change material layer 18 from crystalline to amorphous is decreased due to the decreased contact area between the phase change material layer 18 and first and second electrodes 14, 22.

For example, conventional phase change memory elements (e.g., conventional phase change memory element 1 of FIG. 1) typically have a phase change material layer with a programmable volume having a diameter of about 75 nm and a height of about 50 nm resulting in a volume of about 2.2×10⁵ nm³. The current necessary to reset the phase change material layer having a contact area of a diameter of about 75 nm (4.4×10³ nm²) and a volume of 2.2×10⁵ nm³ is approximately 2 mA.

By contrast, the phase change memory element 100 of FIGS. 2A and 2B could have a phase change material layer 18 with a programmable volume of 5.9×10⁴ nm³ if the thickness t (FIG. 4A) of the phase change material layer 18 is about 5 nm and the height h (FIG. 4A) is the same as the programmable volume in the FIG. 1 phase change memory element 1. The phase change memory element 100 of FIGS. 2A and 2B has a programmable volume nearly one quarter the programmable volume of the conventional phase change memory element. The contact area is also reduced to one quarter of the contact area that the conventional phase change material layers (e.g., phase change material layer 8 of FIGS. 1A and 1B) have with first and second electrodes 2, 4 (FIGS. 1A and 1B). The reduction in the contact area and the programmable volume of the phase change material results in a reduction in the amount of current and power necessary to reset the phase change material layer 18. For example, the current necessary to reset the phase change material layer 18 having a contact area of 1.2×10³ nm² and volume of 5.9×10⁴ nm³ is approximately 0.5 mA as compared to the 2 mA necessary to reset the phase change material of a conventional phase change memory element, and the power consumption is also reduced to one fourth of that of a conventional phase change memory element.

The scaling of phase change memory elements indicates that the reset current is approximately proportional to the area of contact between the phase change material and the first and second electrodes (e.g., first and second electrodes 14, 22 of FIG. 2A). Accordingly, the phase change material layer 18 is deposited to surround a nitride element 16, thereby allowing the contact area of the phase change material layer 18 in contact with the first and second electrodes 14, 22 to be smaller than if the nitride element 16 were not provided, and maintaining a reduced volume of phase change material, while the contact area is linearly dependent on the phase change material layer 18 thickness, and can be precisely controlled through the deposition of the phase change material.

FIGS. 3A-5B illustrate an exemplary method of fabricating the phase change memory element 100 illustrated in FIGS. 2A and 2B. No particular order is required for any of the actions described herein, except for those logically requiring the results of prior actions. Accordingly, while the actions below are described as being performed in a specific order, the order is exemplary only and can be altered if desired. Although the formation of a single phase change memory element 100 is shown, it should be appreciated that the phase change memory element 100 can be one memory element in an array of memory elements, which can be formed concurrently.

FIGS. 3A and 3B illustrate a partial cross-sectional view and a partial top-down view, respectively, of an intermediate structure 100 a. The intermediate structure 100 a is formed by providing a first dielectric layer 12 over a substrate 10. The first dielectric layer 12 is typically etched to create vias 24 (FIG. 2B) within which a first electrode 14 is formed. The first electrode 14 can be formed of any suitable conductive material, such as titanium-nitride (TiN), titanium-aluminum-nitride (TiAlN), titanium-tungsten (TiW), platinum (Pt) or tungsten (W), among others.

A nitride element precursor layer is formed and etched to produce a nitride element 16. The nitride element 16 could be patterned to have a substantially disk-like top-down shape (see FIG. 3B) having sloped sidewall regions 16 b to improve the step coverage of the phase change material deposition, discussed below. Although element 16 is formed as a nitride, it could be formed of other materials. For example, the element 16 could be formed of any insulating material such as, but limited to, silicon nitrides; alumina oxides; oxides; high temperature polymers; low dielectric materials; insulating glass; or insulating polymers.

It should be noted that the disk-like top-down shape of the nitride element 16 is not intended to be limiting in any way. For example, the nitride element 16 could have a triangular, circular, or rectangular top-down shape, as discussed below with respect to FIG. 9. It should also be noted that the sloped sidewalls 16 b are only optional, and that the sidewalls of the nitride element 16 could be vertical relative to a top surface of the first electrode 14, linear, non-linear, bowed, sloped such that a top surface of the nitride element 16 has a greater surface area than that of a bottom surface, or any other desired shape.

FIGS. 4A and 4B illustrate the deposition of a conformal or a partially conformal phase change material on the sidewalls 16 b (FIG. 3A) of the nitride element 16 to form the phase change material layer 18. The deposited phase change material could be a chalcogenide material, such as, for example, germanium-antimony-tellurium or germanium-telluride layer. Exemplary phase change materials may also include, for example, Ge_(x)Sb_(y)Te_(z) (e.g., Ge₂Sb₂Te₅), GaSb, Ge_(x)Te_(y), SbTe (e.g., Sb₂Te₃), InSb, InSe, In_(x)Sb_(y)Te_(z), Sn_(x)Sb_(y)Te_(z), Ga_(x)Se_(y)Te_(z), InSbGe, AgInSbTe, GeSnSbTe, Te_(x)Ge_(y)Sb_(z)S_(k) and GeSbSeTe.

The phase change material layer 18 could have an outside diameter d (FIG. 4B) in the range of about 20 nm to about 200 nm, a height h (FIG. 4A) in the range of about 25 nm to about 75 nm, and a cross-sectional thickness t (FIG. 4A) in the range of about 25 Å to about 200 Å. The illustrated phase change material layer 18 has a diameter d of about 75 nm, a height of about 50 nm, and a cross-sectional thickness t of about 50 Å. The structure parameters are not limited to the above-described values; for example, the parameters can be adjusted for the intended application.

Although, the FIG. 4A phase change material layer 18 has a first surface 18 a that is planar to a first surface 16 a of the nitride element 16, it is not intended to be limiting in any way. For example, the first surface 16 a of the nitride element 16 could be lower than the first surface 18 a of the phase change material layer 18, as discussed below with respect to FIG. 6A.

It should also be noted that the phase change material layer 18 need not completely surround the nitride element 16. For example, the phase change material layer 18 could partially surround the nitride element 16 to further reduce the volume of the phase change material layer 18, which may further reduce the current necessary to switch the state of the phase change material layer 18.

FIGS. 5A and 5B illustrate the deposition of the second dielectric layer 20 over the entire structure illustrated in FIGS. 4A and 4B. The second dielectric layer 20 is subsequently planarized to the level of the upper surface 18 a of phase change material layer 18. The second electrode 22 (FIGS. 2A and 2B) is subsequently formed over the phase change material layer 18 and nitride element 16 to form the phase change memory element 100 (FIGS. 2A and 2B).

Although illustrated as forming a single phase change memory element, it should be understood that the illustrations and descriptions are not intended to be limiting in any way. Those skilled in the art will recognize that a plurality of phase change memory elements are typically fabricated on a single substrate simultaneously. A single substrate could contain thousands or millions of phase change memory elements.

The phase change material layer 18 is the active phase change material with a fixed programmable volume that can be set to a crystalline state or reset to an amorphous state by passing a heating current. Since switching the state of the phase change material layer 18 involves a reduced volume of phase change material, the switching stability and consistency as well as cycling lifetime can be improved as the phase state mixing is reduced

The thickness of the phase change material layer 18 on the sidewall 16 b (FIG. 3A) of the nitride element 16 can be varied, depending on the desired application, to greatly reduce the contact area between phase change material layer 18 and the first and second electrodes 14, 22 (FIGS. 2A and 2B), the programmable current cross-section area, and the programmable volume, thereby resulting in the reduction of the programming current requirement.

It should be noted that although the thickness of the phase change material layer 18 on the sidewall 16 b (FIG. 3A) of the nitride element 16 is illustrated as being uniform, it is not intended to be limiting in any way.

Another advantage of the phase change memory element 100 relates to mitigating heat loss. The majority of heat loss in conventional phase change memory elements during the heating process is due to the heat conduction through the first and second electrodes, which have high thermal conductivity; by reducing the contact area between the phase change material layer 18 and the first and second electrodes 14, 22, the amount of heat loss is mitigated to further reduce the programming current.

Yet another advantage of the phase change memory element 100 relates to the self-alignment with which the phase change material layer 18 is deposited. Because the nitride elements 16 are formed over the first electrode 14, the phase change material layer 18 is self-aligned over the first electrode 14 when deposited. The self-alignment of the phase change material layer 18 with the first electrode 14 ensures that there is an electrical communication with both components. The self-alignment of the phase change material layer 18 with the first electrode 14 may simplify the processing and fabrication of the overall phase change memory element 100, and may also increase throughput.

FIGS. 6A-6C illustrate further exemplary embodiments of a phase change memory element 100. The phase change memory element 100 shown in FIGS. 6A-6C is similar to the phase change memory element shown in FIGS. 2A and 2B, except that the phase change material layer 18 extends over at least a portion of the surface of the first electrode 14 and optionally extends over a portion of the first dielectric layer 12. As described in more detail below, the phase change material layer 18 is etched when the second electrode 22 is etched so that the phase change material layer 18 and the second electrode 22 have a same shape and dimension from a top-down perspective, as shown in FIG. 6B.

The phase change memory element 100 shown in FIG. 6C is similar to the phase change memory element shown in FIGS. 6A and 6B, except that the phase change material layer 18 is also on a top surface 66 of the nitride element 16.

FIGS. 7A-8 depict the formation of the phase change memory element 100 shown in FIGS. 6A-6C. The phase change memory element 100 shown in FIGS. 6A-6C can initially be formed as shown and described in connection with FIGS. 3A and 3B. FIGS. 7A and 7B illustrate the deposition of a conformal or a partially conformal phase change material over the first electrode 14 and the first dielectric layer 12, and on the sidewalls 16 b (FIG. 7A) of the nitride element 16 to form the phase change material layer 18. To achieve the structure shown in FIGS. 6A and 6B, the phase change material layer 18 can be etched away or polished away by CMP from the top surface of the nitride element 16 or the phase change material layer 18 can be formed such that it is excluded from the top surface of the nitride element 16. To achieve the structure shown in FIG. 6C, the phase change material layer 18 is formed on the top surface 66 of the nitride element 16. The second dielectric layer 20 is the deposited over the entire structure and planarized to the level of the upper surface of phase change material layer 18 such that at least a portion of the upper surface of the phase change material layer 18 is exposed.

The deposited phase change material 18 can be any material as described above in connection with FIGS. 4A and 4B. The phase change material layer 18 on the sidewalls of the nitride element 16 can have the same dimensions as described above in connection with FIGS. 4A and 4B. Further, the phase change material layer 18 need not completely surround the nitride element 16. For example, the phase change material layer 18 could partially surround the nitride element 16 to further reduce the volume of the phase change material layer 18, which may further reduce the current necessary to switch the state of the phase change material layer 18.

As shown in FIG. 8, the second electrode 22 is subsequently formed over the phase change material layer 18 and nitride element 16 and in contact with the exposed portions of the phase change material layer 18. The second electrode 22, second dielectric layer 20, and phase change material layer 18 are then patterned and etched to form the phase change memory element 100 (FIGS. 6A-6C). By etching the second electrode 22, second dielectric layer 20, and phase change material layer 18 together and having phase change material layer 18 extend over the first electrode 14 and optionally, the first dielectric layer 12, it is not necessary to conduct a spacer etch process to define the phase change material 18 only on the sidewalls of the nitride element 16, as in FIGS. 2A and 2B. This prevents exposure of the active portion of the phase change material 18 (i.e., the portion of the phase change material 18 that switches between an amorphous state and a crystalline during operation of the memory element 100) to any dry tech chemistry or contaminants, which could impair the performance of the memory element 100.

FIGS. 9A and 9B illustrate another exemplary embodiment of a phase change memory element 200 constructed in accordance with the invention. Specifically, FIGS. 9A and 9B illustrate a partial cross-sectional view and a partial top-down view, respectively, of a phase change memory element 200 having a phase change material layer 218 formed on sidewalls 216 a, 222 a of a nitride element 216 and a second electrode 222, respectively. Although, the second electrode 222 has a first surface 222 b that is planar to a first surface 218 b of the phase change material layer 218, it is not intended to be limiting in any way. For example, the second electrode 222 could have a first surface 222 b that is lower or higher than that of the first surface 218 b of the phase change material layer 218. The phase change material layer 218 is self-aligned over the sidewalls 216 a, 222 a of the nitride element 216 and the second electrode 222, respectively.

The phase change memory element 200 also includes a first dielectric layer 212 formed over a substrate 210, and has a first electrode 214 formed therein. A second dielectric layer 220 is formed over the first dielectric layer 212 and portions of the first electrode 214.

FIGS. 9C and 9D illustrate further exemplary embodiments of a phase change memory element 200. The phase change memory elements 200 shown in FIGS. 9C and 9D are similar to the phase change memory element shown in FIGS. 9A and 9B, except that the phase change material layer 218 extends over at least a portion of the surface of the first electrode 214 and optionally extends over a portion of the first dielectric layer 212. The phase change memory element 200 shown in FIG. 9D is similar to the phase change memory element shown in FIG. 9C, except that the phase change material layer 218 is also on a top surface 266 of the second electrode 222.

The phase change memory elements 200 shown in FIGS. 9C and 9D may include an additional electrode metal over the second electrode 222. As described in 6C, the phase change material layer 218 can be etched when the additional electrode metal is etched so that the phase change material layer 218 and the additional top electrode have a same shape and dimension from a top-down perspective.

FIGS. 10A-11B illustrate an exemplary method of fabricating the FIGS. 9A and 9B phase change memory element 200. The first dielectric layer 212 is formed over a substrate 210. The first electrode 214 is formed within the first dielectric layer 212. A nitride element 216 is formed between the first electrode 214 and the second electrode 222. As discussed above with respect to FIGS. 3A and 3B, the nitride element 216 could be formed to have a substantially disk-like shape (from a top-down view (FIG. 10B)) having sloped sidewalls 216 a for better step coverage of the phase change material deposition. The second electrode 222 is formed over the nitride element 216. The second electrode 222 could also be formed to have a substantially disk-like top-down shape (FIG. 10B) having sloped sidewalls for better step coverage of the phase change material deposition. The materials used to form the nitride element 216 and the second electrode 222 are similar to those discussed above with respect to FIGS. 3A-5B. The nitride element 216 and the second electrode 222 could be formed in situ with one patterning step, although it is not intended to be limiting in any way.

FIGS. 11A and 11B illustrate the deposition of the phase change material layer 218 over the sidewalls 216 a, 222 a of the nitride element 216 and the second electrode 222, respectively. The phase change material layer 218 could be formed of any material discussed above with respect to FIGS. 4A and 4B. The phase change material layer 218 could be formed to have the same dimensions discussed above with respect to FIGS. 4A and 4B.

The second dielectric layer 220 (FIG. 9A) is subsequently deposited over the first dielectric layer 212 and a portion of the first electrode 214. The phase change memory element 200 (FIG. 9A) has a substantially planar surface, which may further reduce the overall size of the phase change memory element 200. The planar surface may also provide for better handling during subsequent processing steps, and add to the overall robustness of the phase change memory element 200.

Although the nitride element 216 is illustrated as having first surface 216 b having a longer length l than a second surface 216 c of the nitride element 216 having a shorter length l′, it is not intended to be limiting in any way. For example, the second surface 216 c of the nitride element 216 could have a length l′ that is equal to or greater than the length l of the first surface 216 b of the nitride element 216. Additionally, although the sidewalls 216 a of the nitride element 216 are illustrated as being substantially linear, it is not intended to be limiting in any way. For example, the sidewalls 216 a could be non-linear or have other desired shapes.

Similarly, although the length of a first surface 222 b of the second electrode 222 is illustrated as being longer than a length of a second surface 222 c, it is not intended to be limiting in any way. For example, the second surface 222 c of the second electrode 222 could have a length that is equal to or greater than the length of the first surface 222 b of the second electrode 222. Additionally, although the sidewalls 222 a of the second electrode 222 are illustrated as being substantially linear, it is not intended to be limiting in any way. For example, the sidewalls 222 a could be non-linear or have other desired shapes.

The phase change memory elements 200 shown in FIGS. 9C and 9D can initially be formed as shown and described in connection with FIGS. 10A and 10B. FIG. 11C illustrates the deposition of the phase change material layer 218 over the nitride element 216 and the second electrode 222, and over the surface of the first electrode 214 and first dielectric layer 212. To achieve the structure shown in FIG. 9C, the phase change material layer 218 can be etched away or polished away by CMP from the top surface of the nitride element 216 or the phase change material layer 218 can be formed such that it is excluded from the top surface of the nitride element 216. To achieve the structure shown in FIG. 9D, the phase change material layer 18 is formed on the top surface 266 of the nitride element 16. The phase change material layer 218 could be formed of any material discussed above with respect to FIGS. 4A and 4B. The phase change material layer 218 on the sidewalls of the nitride element 216 and second electrode 222 can have the same dimensions as described above in connection with FIGS. 4A and 4B.

The second dielectric layer 220 is subsequently deposited over the phase change material layer 218. The second dielectric layer 220 may be planarized to the level of the upper surface of the phase change material layer 218. The phase change material layer 218 and second dielectric layer 220 are then patterned and etched to faun the phase change memory element 200 (FIGS. 9C-9D). By etching the phase change material layer 218 and second dielectric layer 220 together and having phase change material layer 218 extend over the first electrode and optionally, the first dielectric layer 212, it is not necessary to conduct a spacer etch process to define the phase change material 218 only on the sidewalls of the nitride element 216 and second electrode 222, as in FIGS. 9A and 9B. This prevents exposure of the active portion of the phase change material 218 (i.e., the portion of the phase change material 218 that switches between an amorphous state and a crystalline during operation of the memory element 200) to any dry tech chemistry or contaminants, which could impair the performance of the memory element 200.

Although illustrated as forming a single phase change memory element 200, it should be understood that the illustrations and descriptions are not intended to be limiting in any way. Those skilled in the art will recognize that a plurality of phase change memory elements are typically fabricated on a single substrate simultaneously. A single substrate could contain thousands or millions of phase change memory elements.

FIGS. 12A and 12B illustrate a plurality of phase change memory elements 300 constructed in accordance with another exemplary embodiment of the invention. The plurality of phase change memory elements 300 include a phase change material layer 318 formed over sidewalls 320 a of a second dielectric layer 320. The second dielectric layer 320 is formed over a first dielectric layer 312 having first electrodes 314 formed over a substrate 310. A nitride element 316 is formed on the sidewalls 318 a of the phase change material layer 318. A second electrode 322 is formed over the nitride element 316 and a third dielectric layer 324 is formed between the second electrodes 322.

The FIG. 12A nitride element 316 has first and second surfaces 316 b, 316 c, respectively, wherein the length l of the first surface 316 b is shorter than the length l′ of the second surface 316 c; however, it is not intended to be limiting in any way. For example, the first surface 316 b could have a length longer or equal to the length l′ of the second surface 316 c.

The phase change memory elements 300 illustrated in FIGS. 9A and 9B are formed in a substantially similar fashion as the phase change memory element illustrated in FIGS. 2A and 2B. The second dielectric layer 320, however, is formed prior to the formation of the phase change material layer 318 and the nitride element 316. The second dielectric layer is formed over the first dielectric layer 312 and first electrodes 314; the second dielectric layer is then selectively etched to create vias 340 having sloped sidewalls 320 a. Conformal or partially conformal phase change material is deposited on the sidewall 320 a and bottom 340 a portions of the vias 340, and selectively etched to create vias 342 within the phase change material layer 318. The nitride elements 316 are deposited within vias 342, and the entire intermediate structure is planarized. The second electrodes 322 are formed over the phase change material layer 318, and within vias selectively etched into the third dielectric layer 324. Although the vias 342 are illustrated as having a rectangular cross-sectional shape, it is not intended to be limiting in any way; for example, the vias 342 could have additional cross-sectional shapes other than rectangular.

FIGS. 13A and 13B illustrate a plurality of phase change memory elements 400 constructed in accordance with another exemplary embodiment of the invention. The plurality of phase change memory elements 400 include a phase change material layer 418 formed over sidewalls 420 a of a second dielectric layer 420, which is formed over a first electrode 414. The first electrodes 414 are formed within a first dielectric layer 412, which is formed over a substrate 410. A second electrode 422 is formed over a nitride element 416 formed over the phase change material layer 418. A third dielectric layer 424 is formed between the second electrodes 422.

The FIG. 13B phase change material layer 418 has a first diameter d corresponding to the diameter as measured across a surface of the phase change material layer 418 nearest the first electrode 414. The phase change material has a second diameter d′ corresponding to the diameter as measured across a surface of the phase change material layer 418 nearest the second electrode 422. FIG. 13A illustrates the phase change material layer 418 having a planar portion 418 a that is formed over the first electrode and two lateral portions 418 b formed over the sidewalls 420 a of a second dielectric layer 420. The illustrated phase change material layer 418 has a middle portion 418 a that is deposited to coat the area defined by diameter d and has a top surface 418 a′ that has a height less than a top surface 418 b′ of the lateral portions 418 b of the phase change material layer 418.

The FIG. 13A phase change memory elements 400 are formed by providing the second dielectric layer 420, and patterning the dielectric layer 420 such that several vias are formed. A conformal or substantially conformal phase change material is deposited onto the sidewall and bottom regions of the vias to form the phase change material layer 418 followed by the deposition of the nitride elements 416. The entire intermediate structure could be planarized, and a third dielectric layer 424 is deposited and selectively etched to create vias, wherein second electrodes 422 are formed.

FIGS. 14A and 14B illustrate a plurality of phase change memory elements 500 constructed in accordance with another exemplary embodiment of the invention. The plurality of phase change memory elements 500 comprise a phase change material layer 518 formed over sidewalls 520 a of a second dielectric layer 520 and formed over a first electrode 514. The phase change memory elements 500 are nearly identical to the phase change memory elements 400 illustrated in FIGS. 13A and 13B; however, sidewalls 518 b of the phase change material layer 518 have flared portions 518 c, which increase the surface area of the lateral portion 518 b that is in proximity to a second electrode 522.

FIGS. 14C-14E illustrate an exemplary method of fabricating the phase change memory element 500 illustrated in FIGS. 14A and 14B. FIG. 14C illustrates a phase change material layer 518 formed such that the phase change material layer 518 has sidewalls 518 b, a bottom portion 518 b, and flared portions 518 c (FIG. 14B) formed over a first surface 520 b of the second dielectric layer 520, which collectively form a trench, as illustrated in FIG. 14C. A nitride element 516 is formed within the trench, such that the nitride element 516 is formed on the sidewalls 518 a and the bottom portion 518 a of the phase change material layer 518.

FIG. 14D illustrates the planarization of the nitride element 516 and the phase change material layer 518, and the deposition of a second electrode precursor material layer 522′ formed over the planarized surface 526. Once the second electrode precursor 522′ has been deposited, the FIG. 14D structure is selectively etched to form vias 544 to the second dielectric layer 520 illustrated in FIG. 14E. The third dielectric layer 524 (FIG. 14A) is subsequently deposited over the entire FIG. 14E structure.

The FIG. 14A flared portions 518 c have a cross-sectional width w greater than the thickness w′ of the sidewalls 518 b. The greater width w of the flared portions 518 c allows for a greater amount of surface area in proximity to the second electrode 522. Therefore, in operation, the current density in the sidewalls 518 b is significantly larger than the current density in the flared portions 518 c to ensure only the sidewalls 518 b comprise programmable volume and switches state. The flared portions 518 c isolate the programmable volume (the sidewalls 518 b) from the electrodes 522 to reduce heat loss to the electrode 522, which may further reduce the current necessary to change the state of sidewalls 518 b.

FIG. 15 illustrates a simplified processor system 900 which includes a memory circuit 901 having a phase change memory elements 100 constructed in accordance with the invention as described above with respect to FIGS. 2A-14B (e.g., phase change memory element 100, 200, 300, 400, 500).

The FIG. 15 processor system 900, which can be any system including one or more processors, for example, a computer system, generally comprises a central processing unit (CPU) 902, such as a microprocessor, a digital signal processor, or other programmable digital logic devices, which communicates with an input/output (I/O) device 906 over a bus 904. The memory circuit 901 communicates with the CPU 902 over bus 904 typically through a memory controller.

In the case of a computer system, the processor system 900 may include peripheral devices such as a compact disc (CD) ROM drive 910, which also communicate with CPU 902 and hard drive 905 over the bus 904. Memory circuit 901 is preferably constructed as an integrated circuit, which includes a memory array 903 having at least one phase change memory element 100 according to the invention. If desired, the memory circuit 901 may be combined with the processor, for example CPU 900, in a single integrated circuit.

The above description and drawings are only to be considered illustrative of exemplary embodiments, which achieve the features and advantages of the present invention. Modification and substitutions to specific process conditions and structures can be made without departing from the spirit and scope of the present invention. Accordingly, the invention is not to be considered as being limited by the foregoing description and drawings, but is only limited by the scope of the appended claims. 

What is claimed as new and desired to be protected by Letters Patent of the United States is:
 1. A memory element comprising: a first dielectric material having a via therein; a first electrode within the via; an insulating material element positioned over and in contact with the first electrode; a phase change material positioned over the first electrode and in contact with sidewalls of the insulating material element, the phase change material having a first surface in contact with a surface of the first electrode and a surface of the first dielectric material; and a second electrode in contact with a second surface of the phase change material, the second surface of the phase change material being opposite the first surface.
 2. The memory element of claim 1, wherein said phase change material is in contact with a top surface of the insulating material element.
 3. The memory element of claim 1, wherein a top surface of the insulating material element is planar to a top surface of the phase change material.
 4. The memory element of claim 1, wherein a top surface of the insulating material element is below a top surface of the phase change material.
 5. The memory element of claim 4, wherein a top surface of the second electrode is planar to a top surface of the phase change material.
 6. The memory element of claim 1, wherein the phase change material has first and second diameters.
 7. The memory element of claim 6, wherein the first and second diameters are different.
 8. The memory element of claim 1, further comprising a second dielectric material in contact with the phase change material and a bottom surface of the second electrode.
 9. The memory element of claim 8, wherein the second electrode is in contact with a top surface of said insulating material element.
 10. The memory element of claim 1, wherein the phase change material comprises a material selected from the group consisting of germanium-antimony-tellurium, germanium-telluride, GaSb, SbTe, InSb, InSe, In_(x)Sb_(y)Te_(z), Sn_(x)Sb_(y)Te_(z), Ga_(x)Se_(y)Te_(z), InSbGe, AgInSbTe, GeSnSbTe, Te_(x)Ge_(y)Sb_(z)S_(k) and GeSbSeTe.
 11. A method of forming a memory element, the method comprising the acts of: forming a first dielectric material; forming a via within the first dielectric material; forming a first electrode within the via; forming an insulating material element in contact with the first electrode; forming a phase change material in contact with sidewalls of the insulating material element, over and in contact with a surface of the first dielectric material, over and in contact with a surface of the first electrode; forming a second dielectric material over and in contact with the phase change material; exposing at least a portion of a top surface of the phase change material; forming a second electrode in contact with the exposed surface of the phase change material and in contact with a top surface of the second dielectric material; and etching the second electrode, second dielectric material and phase change material but leaving the phase change material extending over at least a portion of the surface of the first electrode.
 12. The method of claim 11, wherein the phase change material is formed in contact with an uppermost surface of the insulating material element.
 13. The method of claim 11, wherein the second electrode, second dielectric material and phase change material are etched during a same etch process.
 14. The method of claim 11, wherein the insulating material element is formed to have sloped sidewalls.
 15. A method of forming a memory element, the method comprising the acts of: forming a first dielectric material; forming a via within the first dielectric material; forming a first electrode within the via; forming an insulating material element in contact with the first electrode; forming a second electrode in contact with a top surface of the insulating material element; forming a phase change material in contact with sidewalls of the second electrode, sidewalls of the insulating material element, a top surface of the first dielectric material and a top surface of the first electrode; and etching the phase change material to remove at least a portion of the phase change material in contact with the first dielectric material, but leaving the phase change material that is in contact with sidewalls of the second electrode, sidewalls of the insulating material element and a top surface of the first electrode.
 16. The method of claim 15, wherein after the etching the phase change material is formed in contact with an uppermost surface of the first dielectric material.
 17. The method of claim 15, further comprising forming a second dielectric material over and in contact with the phase change material prior to etching the phase change material.
 18. The method of claim 17, further comprising etching the second dielectric material and the phase change material during a same etch process. 